Parametric results for: bss306n under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 2 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 3

5 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 5

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DS Breakdown Voltage-Min (1)

30 V 5

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Drain Current-Max (ID) (1)

2.3 A 5

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Drain-source On Resistance-Max (1)

57 mΩ 5

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METAL-OXIDE SEMICONDUCTOR 5

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17 pF 5

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R-PDSO-G3 5

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e3 3

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Manufacturer (1)

Infineon Technologies AG 5

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1 4

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Number of Elements (1)

1 5

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Number of Terminals (1)

3 5

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ENHANCEMENT MODE 5

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150.0 °C 2

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PLASTIC/EPOXY 5

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RECTANGULAR 5

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SMALL OUTLINE 5

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Active 3 Obsolete 2

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Yes 1

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260 3 NOT SPECIFIED 1

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Polarity/Channel Type (1)

N-CHANNEL 5

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500 mW 2

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Surface Mount (1)

YES 5

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