Parametric results for: bss87 under Small Signal Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE 8

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DRAIN 20

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Configuration (2)

SINGLE 4 SINGLE WITH BUILT-IN DIODE 19

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DS Breakdown Voltage-Min (2)

200 V 12 240 V 8

Min (V) - Max (V)

24 hits Apply

Drain Current-Max (ID) (4)

260 mA 3 280 mA 3 290 mA 8 400 mA 9

Min (A) - Max (A)

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Drain-source On Resistance-Max (3)

3 Ω 9 6 Ω 9 10 Ω 2

Min (Ω) - Max (Ω)

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METAL-OXIDE SEMICONDUCTOR 23

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7.3 pF 5 9 pF 1 10 pF 3 12 pF 2 15 pF 9

Min (pF) - Max (pF)

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TO-243 7 TO-243AA 2

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R-PDSO-F4 1 R-PSSO-F3 19

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e0 5 e3 11

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Manufacturer (6)

Infineon Technologies AG 7 Nexperia 2 North American Philips Discrete Products Div 1 NXP Semiconductors 10 Philips Semiconductors 2 Siemens 2

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1 8

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Number of Elements (1)

1 23

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Number of Terminals (2)

3 19 4 1

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ENHANCEMENT MODE 23

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150.0 °C 17

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PLASTIC/EPOXY 20

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RECTANGULAR 20

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SMALL OUTLINE 20

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Active 3 Not Recommended 2 Obsolete 11 Transferred 8

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Yes 4

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260 6 NOT SPECIFIED 2

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Polarity/Channel Type (1)

N-CHANNEL 23

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1 W 8

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Surface Mount (1)

YES 23

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