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BSZ0901NSATMA1
Infineon Technologies AG
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$0.2285 | No | Yes | Not Recommended | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 8 | 30 V | 1 | 22 A | 2.6 mΩ | 150 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 50 W | 160 A | SWITCHING | SILICON | R-PDSO-N8 | e3 | 1 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | NO LEAD | DUAL | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PDSO-N3 | 8 | not_compliant | EAR99 | Infineon | ||
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BSZ0901NSIATMA1
Infineon Technologies AG
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$0.9430 | No | Yes | Not Recommended | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 8 | 30 V | 1 | 25 A | 2.8 mΩ | 80 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 160 A | SWITCHING | SILICON | R-PDSO-N8 | e3 | 1 | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | NO LEAD | DUAL | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PDSO-N3 | 8 | not_compliant | EAR99 | Infineon | ||||
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BSZ0901NS
Infineon Technologies AG
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Check for Price | No | Yes | Not Recommended | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 30 V | 1 | 22 A | 2.6 mΩ | 150 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 160 A | SWITCHING | SILICON | R-PDSO-N3 | e3 | 1 | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | NO LEAD | DUAL | INFINEON TECHNOLOGIES AG | GREEN, PLASTIC, TSDSON-8 | 8 | not_compliant | EAR99 | Infineon | ||||
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BSZ0901NSXT
Infineon Technologies AG
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Check for Price | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 8 | 30 V | 1 | 22 A | 2.6 mΩ | 150 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 160 A | SWITCHING | SILICON | R-PDSO-N8 | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | NO LEAD | DUAL | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PDSO-N3 | compliant | EAR99 | ||||||||||
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BSZ0901NSI
Infineon Technologies AG
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Check for Price | No | Yes | Not Recommended | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 30 V | 1 | 25 A | 2.8 mΩ | 80 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 69 W | 160 A | SWITCHING | SILICON | R-PDSO-N3 | e3 | 1 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | NO LEAD | DUAL | INFINEON TECHNOLOGIES AG | 8 | not_compliant | EAR99 | Infineon |