Parametric results for: buk456200a under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

DRAIN 3

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Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 3

5 hits Apply

DS Breakdown Voltage-Min (1)

200 V 3

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Drain Current-Max (ID) (1)

19 A 5

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Drain-source On Resistance-Max (1)

160 mΩ 3

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METAL-OXIDE SEMICONDUCTOR 5

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100 pF 1

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TO-220AB 3

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R-PSFM-T3 3

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e0 2

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Manufacturer (3)

North American Philips Discrete Products Div 1 NXP Semiconductors 3 Philips Semiconductors 1

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Number of Elements (1)

1 5

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Number of Terminals (1)

3 3

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ENHANCEMENT MODE 5

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150.0 °C 2 175.0 °C 3

Min (°C) - Max (°C)

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PLASTIC/EPOXY 3

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RECTANGULAR 3

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FLANGE MOUNT 3

5 hits Apply

Obsolete 3 Transferred 2

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Polarity/Channel Type (1)

N-CHANNEL 5

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150 W 1

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150 W 2

5 hits Apply

Surface Mount (1)

NO 5

5 hits Apply