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Parametric » Transistors » Power Field-Effect Transistors

Parametric results for: buk6e4r0-75c under Power Field-Effect Transistors

Select parts from the table below to compare.

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Select Parts		Part Number

		BUK6E4R0-75C,127 Nexperia
		BUK6E4R0-75C,127 NXP Semiconductors
		BUK6E4R0-75C Nexperia
		BUK6E4R0-75C NXP Semiconductors

			Most Relevant								Technical							Compliance				Operating Conditions	Physical							Other
Composite Price	Rohs Code	Part Life Cycle Code	Polarity/Channel Type	Surface Mount	Configuration	Number of Terminals	DS Breakdown Voltage-Min	Number of Elements	Drain Current-Max (ID)	Drain-source On Resistance-Max	Avalanche Energy Rating (Eas)	FET Technology	Operating Mode	Power Dissipation-Max (Abs)	Pulsed Drain Current-Max (IDM)	Transistor Application	Transistor Element Material	JEDEC-95 Code	JESD-30 Code	JESD-609 Code	Qualification Status	Operating Temperature-Max	Case Connection	Package Body Material	Package Shape	Package Style	Terminal Finish	Terminal Form	Terminal Position	Ihs Manufacturer	Part Package Code	Package Description	Pin Count	Manufacturer Package Code	Reach Compliance Code	ECCN Code	Date Of Intro

Check for Price

Yes

Obsolete

N-CHANNEL

NO

SINGLE WITH BUILT-IN DIODE

3

75 V

1

120 A

6 mΩ

523 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

670 A

SWITCHING

SILICON

TO-262AA

R-PSIP-T3

e3

DRAIN

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

TIN

THROUGH-HOLE

SINGLE

NEXPERIA

TO-262

TO-262, I2PAK-3

3

SOT226

not_compliant

EAR99

Check for Price

Yes

Transferred

N-CHANNEL

YES

SINGLE

1

100 A

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

306 W

e3

175 °C

Tin (Sn)

NXP SEMICONDUCTORS

TO-262

3

SOT226

not_compliant

EAR99

Check for Price

Yes

Obsolete

N-CHANNEL

NO

SINGLE WITH BUILT-IN DIODE

3

75 V

1

120 A

6 mΩ

523 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

670 A

SWITCHING

SILICON

TO-262AA

R-PSIP-T3

e3

DRAIN

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

TIN

THROUGH-HOLE

SINGLE

NEXPERIA

TO-262, I2PAK-3

not_compliant

EAR99

2017-02-01

Check for Price

Yes

Transferred

N-CHANNEL

NO

SINGLE WITH BUILT-IN DIODE

3

75 V

1

120 A

6 mΩ

523 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

670 A

SWITCHING

SILICON

TO-262AA

R-PSIP-T3

e3

Not Qualified

175 °C

DRAIN

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

TIN

THROUGH-HOLE

SINGLE

NXP SEMICONDUCTORS

TO-262AA

IN-LINE, R-PSIP-T3

3

unknown

EAR99

Compare

BUK6E4R0-75C,127

Nexperia

Check for Price

Yes

Obsolete

N-CHANNEL

NO

SINGLE WITH BUILT-IN DIODE

3

75 V

1

120 A

6 mΩ

523 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

670 A

SWITCHING

SILICON

TO-262AA

R-PSIP-T3

e3

DRAIN

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

TIN

THROUGH-HOLE

SINGLE

NEXPERIA

TO-262

TO-262, I2PAK-3

3

SOT226

not_compliant

EAR99

BUK6E4R0-75C,127

NXP Semiconductors

Check for Price

Yes

Transferred

N-CHANNEL

YES

SINGLE

1

100 A

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

306 W

e3

175 °C

Tin (Sn)

NXP SEMICONDUCTORS

TO-262

3

SOT226

not_compliant

EAR99

Nexperia

Check for Price

Yes

Obsolete

N-CHANNEL

NO

SINGLE WITH BUILT-IN DIODE

3

75 V

1

120 A

6 mΩ

523 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

670 A

SWITCHING

SILICON

TO-262AA

R-PSIP-T3

e3

DRAIN

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

TIN

THROUGH-HOLE

SINGLE

NEXPERIA

TO-262, I2PAK-3

not_compliant

EAR99

2017-02-01

NXP Semiconductors

Check for Price

Yes

Transferred

N-CHANNEL

NO

SINGLE WITH BUILT-IN DIODE

3

75 V

1

120 A

6 mΩ

523 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

670 A

SWITCHING

SILICON

TO-262AA

R-PSIP-T3

e3

Not Qualified

175 °C

DRAIN

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

TIN

THROUGH-HOLE

SINGLE

NXP SEMICONDUCTORS

TO-262AA

IN-LINE, R-PSIP-T3

3

unknown

EAR99