Parametric results for: buz45 under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

HIGH VOLTAGE, FAST SWITCHING 2

27 hits Apply

DRAIN 6

27 hits Apply

Configuration (2)

SINGLE 20 SINGLE WITH BUILT-IN DIODE 5

27 hits Apply

DS Breakdown Voltage-Min (1)

500 V 13

27 hits Apply

Drain Current-Max (ID) (3)

8.3 A 9 9.6 A 10 10 A 6

Min (A) - Max (A)

27 hits Apply

Drain-source On Resistance-Max (3)

500 mΩ 2 600 mΩ 5 800 mΩ 5

Min (Ω) - Max (Ω)

27 hits Apply

METAL-OXIDE SEMICONDUCTOR 25

27 hits Apply

170 pF 6

27 hits Apply

TO-204AA 6 TO-3 6

27 hits Apply

O-MBFM-P2 12

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e0 20

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Manufacturer (11)

Harris Semiconductor 3 Infineon Technologies AG 3 Intersil Corporation 3 New Jersey Semiconductor Products Inc 1 North American Philips Discrete Products Div 3 Semiconductor Technology Inc 2 Siemens 3 STMicroelectronics 2 Thomson Consumer Electronics 3 TT Electronics Power and Hybrid / Semelab Limited 2 TT Electronics Resistors 2

27 hits Apply

Number of Elements (1)

1 25

27 hits Apply

Number of Terminals (1)

2 12

27 hits Apply

ENHANCEMENT MODE 25

27 hits Apply

150.0 °C 20

27 hits Apply

METAL 12

27 hits Apply

ROUND 12

27 hits Apply

FLANGE MOUNT 12

27 hits Apply

Active 1 Contact Manufacturer 2 Obsolete 21 Transferred 3

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Polarity/Channel Type (1)

N-CHANNEL 25

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125 W 6

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125 W 20

27 hits Apply

Surface Mount (1)

NO 24

27 hits Apply