Parametric results for: com1/40 under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

HIGH RELIABILITY 3

3 hits Apply

ISOLATED 3

3 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

100 V 3

3 hits Apply

Drain Current-Max (ID) (1)

14 A 3

3 hits Apply

Drain-source On Resistance-Max (2)

120 mΩ 1 320 mΩ 2

Min (Ω) - Max (Ω)

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

TO-257AA 3

3 hits Apply

R-MSFM-P3 1 S-MSFM-T3 2

3 hits Apply

e0 2

3 hits Apply

Manufacturer (3)

Infineon Technologies AG 1 International Rectifier 1 Omnirel Corp 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

3 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

150.0 °C 2

3 hits Apply

METAL 3

3 hits Apply

RECTANGULAR 1 SQUARE 2

3 hits Apply

FLANGE MOUNT 3

3 hits Apply

Obsolete 1 Transferred 2

3 hits Apply

No 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

125 W 2

3 hits Apply

Surface Mount (1)

NO 3

3 hits Apply