Parametric results for: csd25481f4 under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

ULTRA LOW RESISTANCE 2

3 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE AND RESISTOR 2

3 hits Apply

DS Breakdown Voltage-Min (1)

20 V 2

3 hits Apply

Drain Current-Max (ID) (2)

-2.5 A 2 2.5 A 1

Min (A) - Max (A)

3 hits Apply

Drain-source On Resistance-Max (1)

174 mΩ 2

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

5.5 pF 2

3 hits Apply

R-PBGA-B3 1 R-XBGA-N3 1

3 hits Apply

e4 2

3 hits Apply

Manufacturer (1)

Texas Instruments 3

3 hits Apply

1 2

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

3 2

3 hits Apply

ENHANCEMENT MODE 2

3 hits Apply

150.0 °C 3

3 hits Apply

-55.0 °C 2

3 hits Apply

UNSPECIFIED 2

3 hits Apply

RECTANGULAR 2

3 hits Apply

GRID ARRAY 2

3 hits Apply

Active 2 Obsolete 1

3 hits Apply

No 1 Yes 2

3 hits Apply

260 2 NOT SPECIFIED 1

3 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 3

3 hits Apply

500 mW 3

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply