Parametric results for: di-33 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

FAST SWITCHING, AVALANCHE RATED 2

3 hits Apply

918.0 mJ 2

3 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 2

3 hits Apply

DS Breakdown Voltage-Min (1)

250 V 2

3 hits Apply

Drain Current-Max (ID) (1)

33 A 2

3 hits Apply

Drain-source On Resistance-Max (1)

94 mΩ 2

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

3 hits Apply

R-PSIP-T3 2

3 hits Apply

e3 2

3 hits Apply

Manufacturer (3)

Diotec Semiconductor AG 1 Fairchild Semiconductor Corporation 1 Rochester Electronics LLC 1

3 hits Apply

1 1 NOT APPLICABLE 1

3 hits Apply

Number of Elements (1)

1 2

3 hits Apply

Number of Terminals (1)

3 2

3 hits Apply

ENHANCEMENT MODE 2

3 hits Apply

150.0 °C 1

3 hits Apply

PLASTIC/EPOXY 2

3 hits Apply

RECTANGULAR 2

3 hits Apply

IN-LINE 2

3 hits Apply

Active 2 Obsolete 1

3 hits Apply

Yes 1

3 hits Apply

260 1 NOT APPLICABLE 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

3 hits Apply

235 W 1

3 hits Apply

Surface Mount (1)

NO 2

3 hits Apply