Parametric results for: dn2625dk6-g under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Surface Mount

LOW THRESHOLD 4

4 hits Apply

DRAIN 4

4 hits Apply

Configuration (2)

SEPARATE, 2 ELEMENTS 3 SINGLE WITH BUILT-IN DIODE 1

4 hits Apply

DS Breakdown Voltage-Min (1)

250 V 4

4 hits Apply

Drain Current-Max (ID) (1)

1.1 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

3.5 Ω 4

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

70 pF 4

4 hits Apply

R-PDSO-N8 1 S-PDSO-N8 3

4 hits Apply

e3 3

4 hits Apply

Manufacturer (2)

Microchip Technology Inc 2 Supertex Inc 2

4 hits Apply

Number of Elements (2)

1 1 2 3

Min - Max

4 hits Apply

Number of Terminals (1)

8 4

4 hits Apply

DEPLETION MODE 4

4 hits Apply

150.0 °C 4

4 hits Apply

-55.0 °C 4

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

RECTANGULAR 1 SQUARE 3

4 hits Apply

SMALL OUTLINE 4

4 hits Apply

Active 2 Transferred 2

4 hits Apply

Yes 1

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply