Parametric results for: dta123j under Small Signal Bipolar Transistors

All Filters Additional Feature Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

BUILT IN BIAS RESISTANCE RATIO IS 21 34 BUILT IN BIAS RESISTOR RATIO 21 2 BUILT IN BIAS RESISTOR RATIO 21.364 2 BUILT IN BIAS RESISTOR RATIO IS 21.36 1 BUILT-IN BIAS RESISTANCE RATIO IS 21 1 BUILT-IN BIAS RESISTOR 14 BUILT-IN BIAS RESISTOR RATIO 21 3 BUILT-IN BIAS RESISTOR RATIO 21.36 1 BUILT-IN BIAS RESISTOR RATIO IS 21 44 BUILT-IN BIAS RESISTOR RATIO IS 21.3 8 BUILT-IN BIAS RESISTOR RATIO IS 21.36 20 DIGITAL, BUILT IN BIAS RESISTOR RATIO 21.4 4 DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 21 13 DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 21.3 6 DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 21.36 5 HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 21.36 4

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COLLECTOR 9

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Collector Current-Max (IC) (1)

100 mA 186

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Collector-Emitter Voltage-Max (1)

50 V 136

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Configuration (2)

SINGLE 13 SINGLE WITH BUILT-IN RESISTOR 149

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DC Current Gain-Min (hFE) (2)

80.0 147 100.0 46

Min - Max

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TO-236 2 TO-236AB 8 TO-92 10

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O-PBCY-T3 10 R-PBCC-N3 7 R-PDSO-F3 13 R-PDSO-G3 104 R-PDSO-N3 3 R-PSIP-T3 25

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e0 21 e1 19 e2 3 e3 70

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Manufacturer (23)

Comchip Technology Corporation Ltd 1 Diodes Incorporated 16 Galaxy Microelectronics 1 Galaxy Semi-Conductor Co Ltd 1 Jiangsu Changjiang Electronics Technology Co Ltd 5 LRC Leshan Radio Co Ltd 10 Micro Commercial Components 18 Motorola Mobility LLC 1 Motorola Semiconductor Products 1 Nexperia 24 NXP Semiconductors 21 onsemi 4 Philips Semiconductors 7 Rectron Semiconductor 3 Rochester Electronics LLC 3 ROHM Semiconductor 70 Secos Corporation 5 SY Sinyork Co Ltd 2 Taiwan Semiconductor 21 Tak Cheong Electronics (Holdings) Co Ltd 1 Toshiba America Electronic Components 3 Unisonic Technologies Co Ltd 23 WEITRON INTERNATIONAL CO., LTD. 2

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1 74 NOT SPECIFIED 3

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Number of Elements (1)

1 196

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Number of Terminals (1)

3 162

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125.0 °C 1 150.0 °C 59

Min (°C) - Max (°C)

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-55.0 °C 3

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PLASTIC/EPOXY 162

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RECTANGULAR 152 ROUND 10

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CHIP CARRIER 7 CYLINDRICAL 10 IN-LINE 25 SMALL OUTLINE 120

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Active 110 Contact Manufacturer 13 End Of Life 2 Not Recommended 6 Obsolete 88 Transferred 24

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No 7 Yes 34

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235 2 240 4 260 73 NOT SPECIFIED 37

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Polarity/Channel Type (2)

NPN 1 PNP 193

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200 mW 2

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150 mW 17 200 mW 38 250 mW 11 300 mW 18 500 mW 2 550 mW 2 600 mW 2 625 mW 6

Min (W) - Max (W)

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Surface Mount (2)

NO 42 YES 155

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Transition Frequency-Nom (fT) (2)

180 MHz 17 250 MHz 108

Min (MHz) - Max (MHz)

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