Parametric results for: epc2019 under Power Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type

ULTRA LOW RESISTANCE 1

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Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

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DS Breakdown Voltage-Min (1)

200 V 1

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Drain Current-Max (ID) (1)

8.5 A 1

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Drain-source On Resistance-Max (1)

50 mΩ 1

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METAL-OXIDE SEMICONDUCTOR 1

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R-XXUC-X7 1

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Manufacturer (1)

Efficient Power Conversion 1

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Number of Elements (1)

1 1

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Number of Terminals (1)

7 1

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ENHANCEMENT MODE 1

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UNSPECIFIED 1

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RECTANGULAR 1

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UNCASED CHIP 1

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Contact Manufacturer 1

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NOT SPECIFIED 1

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Polarity/Channel Type (1)

N-CHANNEL 1

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