Parametric results for: f1001c under Power Field-Effect Transistors

All Filters Configuration Drain Current-Max (ID) FET Technology Manufacturer Number of Elements Operating Mode Operating Temperature-Max Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE 1

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Drain Current-Max (ID) (1)

2 A 1

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METAL-OXIDE SEMICONDUCTOR 1

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Manufacturer (1)

Polyfet RF Devices 1

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Number of Elements (1)

1 1

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ENHANCEMENT MODE 1

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200.0 °C 1

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Contact Manufacturer 1

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Polarity/Channel Type (1)

N-CHANNEL 1

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50 W 1

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Surface Mount (1)

NO 1

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