Parametric results for: f9221 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

290.0 mJ 1

4 hits Apply

DRAIN 1

4 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 1

4 hits Apply

DS Breakdown Voltage-Min (2)

150 V 3 500 V 1

Min (V) - Max (V)

4 hits Apply

Drain Current-Max (ID) (1)

2.5 A 3

4 hits Apply

Drain-source On Resistance-Max (2)

900 mΩ 1 1.5 Ω 3

Min (Ω) - Max (Ω)

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

TO-205AF 3

4 hits Apply

O-MBCY-W3 3

4 hits Apply

e0 2

4 hits Apply

Manufacturer (4)

Fuji Electric Co Ltd 1 Harris Semiconductor 1 International Rectifier 1 Rochester Electronics LLC 1

4 hits Apply

Number of Elements (1)

1 3

4 hits Apply

Number of Terminals (1)

3 3

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 2

4 hits Apply

METAL 3

4 hits Apply

ROUND 3

4 hits Apply

CYLINDRICAL 3

4 hits Apply

Active 1 Obsolete 2 Transferred 1

4 hits Apply

Polarity/Channel Type (2)

N-CHANNEL 1 P-CHANNEL 3

4 hits Apply

20 W 1

4 hits Apply

20 W 2

4 hits Apply

Surface Mount (1)

NO 3

4 hits Apply