Parametric results for: fcp190n60 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

400.0 mJ 4

13 hits Apply

Configuration (3)

SINGLE 2 Single 1 SINGLE WITH BUILT-IN DIODE 4

13 hits Apply

DS Breakdown Voltage-Min (1)

600 V 4

13 hits Apply

Drain Current-Max (Abs) (ID) (1)

20.2 A 1

13 hits Apply

Drain Current-Max (ID) (2)

20.2 A 4 20.6 A 2

Min (A) - Max (A)

13 hits Apply

Drain-source On Resistance-Max (1)

199 mΩ 4

13 hits Apply

METAL-OXIDE SEMICONDUCTOR 7

13 hits Apply

TO-220AB 4

13 hits Apply

R-PSFM-T3 4

13 hits Apply

e3 5

13 hits Apply

Manufacturer (3)

Fairchild Semiconductor Corporation 3 Micross Components 6 onsemi 4

13 hits Apply

Number of Elements (1)

1 6

13 hits Apply

Number of Terminals (1)

3 4

13 hits Apply

ENHANCEMENT MODE 5

13 hits Apply

150.0 °C 7

13 hits Apply

PLASTIC/EPOXY 4

13 hits Apply

RECTANGULAR 4

13 hits Apply

FLANGE MOUNT 4

13 hits Apply

Active 7 End Of Life 1 Obsolete 2 Transferred 3

13 hits Apply

Yes 6

13 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 7

13 hits Apply

208 W 7

13 hits Apply

Surface Mount (1)

NO 7

13 hits Apply