Parametric results for: fdb6030l under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

150.0 mJ 1 180.0 mJ 3

Min (mJ) - Max (mJ)

5 hits Apply

DRAIN 4

5 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

5 hits Apply

DS Breakdown Voltage-Min (1)

30 V 4

5 hits Apply

Drain Current-Max (ID) (1)

52 A 4

5 hits Apply

Drain-source On Resistance-Max (2)

13 mΩ 3 13.5 mΩ 1

Min (Ω) - Max (Ω)

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

5 hits Apply

TO-263AB 4

5 hits Apply

R-PSSO-G2 4

5 hits Apply

e3 3

5 hits Apply

Manufacturer (3)

Fairchild Semiconductor Corporation 3 onsemi 1 Rochester Electronics LLC 1

5 hits Apply

1 3

5 hits Apply

Number of Elements (1)

1 4

5 hits Apply

Number of Terminals (1)

2 4

5 hits Apply

ENHANCEMENT MODE 4

5 hits Apply

175.0 °C 3

5 hits Apply

PLASTIC/EPOXY 4

5 hits Apply

RECTANGULAR 4

5 hits Apply

SMALL OUTLINE 4

5 hits Apply

Active 1 Obsolete 4

5 hits Apply

Yes 2

5 hits Apply

260 1

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

5 hits Apply

75 W 2

5 hits Apply

52 W 2

5 hits Apply

Surface Mount (1)

YES 4

5 hits Apply