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Parametric » Transistors » Power Field-Effect Transistors

Parametric results for: fdb86360-f085 under Power Field-Effect Transistors

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Select Parts		Part Number

		FDB86360-F085 onsemi
		FDB86360_F085 onsemi
		FDB86360_F085 Fairchild Semiconductor Corporation

				Most Relevant								Technical						Compliance				Operating Conditions				Physical							Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Polarity/Channel Type	Surface Mount	Configuration	Number of Terminals	DS Breakdown Voltage-Min	Number of Elements	Drain Current-Max (ID)	Drain-source On Resistance-Max	Avalanche Energy Rating (Eas)	FET Technology	Operating Mode	Power Dissipation-Max (Abs)	Transistor Application	Transistor Element Material	JEDEC-95 Code	JESD-30 Code	JESD-609 Code	Reference Standard	Moisture Sensitivity Level	Operating Temperature-Max	Peak Reflow Temperature (Cel)	Time@Peak Reflow Temperature-Max (s)	Case Connection	Package Body Material	Package Shape	Package Style	Terminal Finish	Terminal Form	Terminal Position	Ihs Manufacturer	Part Package Code	Package Description	Manufacturer Package Code	Reach Compliance Code	ECCN Code	Samacsys Manufacturer	Pin Count	HTS Code

Yes

Lifetime Buy

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

2

80 V

1

110 A

1.8 mΩ

1167 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

333 W

SWITCHING

SILICON

TO-263AB

R-PSSO-G2

e3

AEC-Q101

1

175 °C

245

30

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Matte Tin (Sn) - annealed

GULL WING

SINGLE

ONSEMI

TO-263 2L (D2PAK)

ROHS COMPLIANT, TO-263, D2PAK-3/2

418AJ

not_compliant

EAR99

onsemi

Check for Price

Yes

Obsolete

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

2

80 V

1

110 A

1.8 mΩ

1167 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

333 W

SWITCHING

SILICON

TO-263AB

R-PSSO-G2

e3

AEC-Q101

1

175 °C

245

30

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Matte Tin (Sn) - annealed

GULL WING

SINGLE

ON SEMICONDUCTOR

SMALL OUTLINE, R-PSSO-G2

TO263A02

compliant

EAR99

Check for Price

Yes

Yes

Transferred

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

2

80 V

1

110 A

1.8 mΩ

1167 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

333 W

SWITCHING

SILICON

TO-263AB

R-PSSO-G2

AEC-Q101

1

175 °C

260

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

GULL WING

SINGLE

FAIRCHILD SEMICONDUCTOR CORP

D2PAK

SMALL OUTLINE, R-PSSO-G2

2LD,TO263, SURFACE MOUNT

compliant

EAR99

2

8541.29.00.95

Compare

onsemi

Yes

Lifetime Buy

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

2

80 V

1

110 A

1.8 mΩ

1167 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

333 W

SWITCHING

SILICON

TO-263AB

R-PSSO-G2

e3

AEC-Q101

1

175 °C

245

30

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Matte Tin (Sn) - annealed

GULL WING

SINGLE

ONSEMI

TO-263 2L (D2PAK)

ROHS COMPLIANT, TO-263, D2PAK-3/2

418AJ

not_compliant

EAR99

onsemi

onsemi

Check for Price

Yes

Obsolete

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

2

80 V

1

110 A

1.8 mΩ

1167 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

333 W

SWITCHING

SILICON

TO-263AB

R-PSSO-G2

e3

AEC-Q101

1

175 °C

245

30

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Matte Tin (Sn) - annealed

GULL WING

SINGLE

ON SEMICONDUCTOR

SMALL OUTLINE, R-PSSO-G2

TO263A02

compliant

EAR99

Fairchild Semiconductor Corporation

Check for Price

Yes

Yes

Transferred

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

2

80 V

1

110 A

1.8 mΩ

1167 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

333 W

SWITCHING

SILICON

TO-263AB

R-PSSO-G2

AEC-Q101

1

175 °C

260

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

GULL WING

SINGLE

FAIRCHILD SEMICONDUCTOR CORP

D2PAK

SMALL OUTLINE, R-PSSO-G2

2LD,TO263, SURFACE MOUNT

compliant

EAR99

2

8541.29.00.95