Parametric results for: fdc608pz. under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

20 V 4

4 hits Apply

Drain Current-Max (ID) (1)

5.8 A 4

4 hits Apply

Drain-source On Resistance-Max (2)

30 mΩ 2 43 mΩ 2

Min (Ω) - Max (Ω)

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

230 pF 2

4 hits Apply

R-PDSO-G6 4

4 hits Apply

e3 4

4 hits Apply

Manufacturer (3)

Fairchild Semiconductor Corporation 1 onsemi 2 Rochester Electronics LLC 1

4 hits Apply

1 4

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

6 4

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 3

4 hits Apply

-55.0 °C 2

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

SMALL OUTLINE 4

4 hits Apply

Active 2 Obsolete 1 Transferred 1

4 hits Apply

Yes 4

4 hits Apply

260 4

4 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 4

4 hits Apply

1.6 W 3

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply