Parametric results for: fdc658 under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE 8

14 hits Apply

Configuration (2)

SINGLE 5 SINGLE WITH BUILT-IN DIODE 8

14 hits Apply

DS Breakdown Voltage-Min (1)

30 V 8

14 hits Apply

Drain Current-Max (ID) (1)

4 A 13

14 hits Apply

Drain-source On Resistance-Max (1)

50 mΩ 8

14 hits Apply

METAL-OXIDE SEMICONDUCTOR 13

14 hits Apply

90 pF 1

14 hits Apply

R-PDSO-G6 8

14 hits Apply

e3 9

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Manufacturer (3)

Fairchild Semiconductor Corporation 9 onsemi 3 Rochester Electronics LLC 2

14 hits Apply

1 9

14 hits Apply

Number of Elements (1)

1 13

14 hits Apply

Number of Terminals (1)

6 8

14 hits Apply

ENHANCEMENT MODE 13

14 hits Apply

150.0 °C 11

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-55.0 °C 2

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PLASTIC/EPOXY 8

14 hits Apply

RECTANGULAR 8

14 hits Apply

SMALL OUTLINE 8

14 hits Apply

Active 4 Obsolete 8 Transferred 2

14 hits Apply

Yes 6

14 hits Apply

260 8

14 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 13

14 hits Apply

1.6 W 1

14 hits Apply

1.6 W 10

14 hits Apply

Surface Mount (1)

YES 13

14 hits Apply