Parametric results for: fdd120an15a0 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

122.0 mJ 6

6 hits Apply

DRAIN 6

6 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 6

6 hits Apply

DS Breakdown Voltage-Min (1)

150 V 6

6 hits Apply

Drain Current-Max (ID) (1)

14 A 6

6 hits Apply

Drain-source On Resistance-Max (1)

120 mΩ 6

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

TO-252AA 6

6 hits Apply

R-PSSO-G2 6

6 hits Apply

e3 6

6 hits Apply

Manufacturer (2)

Fairchild Semiconductor Corporation 3 onsemi 3

6 hits Apply

1 5

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

2 6

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

175.0 °C 6

6 hits Apply

-55.0 °C 3

6 hits Apply

PLASTIC/EPOXY 6

6 hits Apply

RECTANGULAR 6

6 hits Apply

SMALL OUTLINE 6

6 hits Apply

Active 1 Lifetime Buy 1 Obsolete 2 Transferred 2

6 hits Apply

Yes 5

6 hits Apply

260 4 NOT SPECIFIED 1

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

65 W 6

6 hits Apply

Surface Mount (1)

YES 6

6 hits Apply