Parametric results for: fdms86200 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

220.0 mJ 2 294.0 mJ 2

Min (mJ) - Max (mJ)

4 hits Apply

DRAIN 4

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

150 V 4

4 hits Apply

Drain Current-Max (ID) (2)

9.3 A 2 9.6 A 2

Min (A) - Max (A)

4 hits Apply

Drain-source On Resistance-Max (2)

17 mΩ 2 18 mΩ 2

Min (Ω) - Max (Ω)

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

MO-240AA 4

4 hits Apply

R-PDSO-F5 4

4 hits Apply

e3 4

4 hits Apply

Manufacturer (2)

Fairchild Semiconductor Corporation 2 onsemi 2

4 hits Apply

1 4

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

5 4

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 4

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

SMALL OUTLINE 4

4 hits Apply

Active 2 Transferred 2

4 hits Apply

Yes 4

4 hits Apply

260 4

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

104 W 2 125 W 2

Min (W) - Max (W)

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply