Parametric results for: fdms8692 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

72.0 mJ 2

4 hits Apply

DRAIN 2

4 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 2

4 hits Apply

DS Breakdown Voltage-Min (1)

30 V 2

4 hits Apply

Drain Current-Max (ID) (2)

12 A 2 48 A 1

Min (A) - Max (A)

4 hits Apply

Drain-source On Resistance-Max (1)

9 mΩ 2

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

4 hits Apply

R-PDSO-F5 2

4 hits Apply

Manufacturer (3)

Fairchild Semiconductor Corporation 2 onsemi 1 Rochester Electronics LLC 1

4 hits Apply

1 1 NOT SPECIFIED 1

4 hits Apply

Number of Elements (1)

1 3

4 hits Apply

Number of Terminals (1)

5 2

4 hits Apply

ENHANCEMENT MODE 3

4 hits Apply

150.0 °C 2

4 hits Apply

PLASTIC/EPOXY 2

4 hits Apply

RECTANGULAR 2

4 hits Apply

SMALL OUTLINE 2

4 hits Apply

Active 1 Obsolete 3

4 hits Apply

Yes 2

4 hits Apply

260 1 NOT SPECIFIED 2

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

4 hits Apply

41 W 2

4 hits Apply

Surface Mount (1)

YES 3

4 hits Apply