Parametric results for: fdn359bn under Small Signal Field-Effect Transistors
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FDN359BN
onsemi
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$0.1828 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 30 V | 1 | 2.7 A | 46 mΩ | 100 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) - annealed | GULL WING | DUAL | ONSEMI | SUPERSOT-3 | 527AG | compliant | EAR99 | onsemi | |||||||
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FDN359BN
Fairchild Semiconductor Corporation
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$0.4956 | Yes | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 30 V | 1 | 2.7 A | 46 mΩ | 100 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 500 mW | SWITCHING | SILICON | R-PDSO-G3 | e3 | Not Qualified | 1 | 150 °C | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | FAIRCHILD SEMICONDUCTOR CORP | SUPERSOT-3 | MOLDED PACKAGE, SUPERSOT, 3 LEAD | compliant | EAR99 | SSOT | 3 | 8541.21.00.95 | |||
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FDN359BN_F095
Fairchild Semiconductor Corporation
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Check for Price | Yes | Contact Manufacturer | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 30 V | 1 | 2.7 A | 46 mΩ | 100 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | R-PDSO-G3 | e3 | 1 | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | DUAL | FAIRCHILD SEMICONDUCTOR CORP | SMALL OUTLINE, R-PDSO-G3 | compliant | ||||||||||||
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FDN359BN-F095
Fairchild Semiconductor Corporation
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Check for Price | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 30 V | 1 | 2.7 A | 46 mΩ | 100 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | R-PDSO-G3 | e3 | 1 | 260 | 30 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | DUAL | FAIRCHILD SEMICONDUCTOR CORP | SMALL OUTLINE, R-PDSO-G3 | SUPERSOT | compliant | SOT | 3 | |||||||||
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FDN359BN
Rochester Electronics LLC
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Check for Price | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 30 V | 1 | 2.7 A | 46 mΩ | 100 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | R-PDSO-G3 | e3 | COMMERCIAL | 1 | 260 | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | ROCHESTER ELECTRONICS LLC | SUPERSOT-3 | SUPERSOT | unknown | SOT | 3 |