Parametric results for: fds6676as08 under Small Signal Field-Effect Transistors

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Manufacturer Part Number: fds6676as
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FDS6676AS
onsemi
Check for Price Yes End Of Life N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 8 30 V 1 14.5 A 6 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 2.5 W SWITCHING SILICON R-PDSO-G8 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL ONSEMI SO-8 751EB compliant EAR99 onsemi
FDS6676AS_NL
Fairchild Semiconductor Corporation
Check for Price Yes Obsolete N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 8 30 V 1 14.5 A 6 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 2.5 W SWITCHING SILICON R-PDSO-G8 e3 Not Qualified 1 150 °C PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL FAIRCHILD SEMICONDUCTOR CORP LEAD FREE, SO-8 not_compliant EAR99 SOT 8
FDS6676AS
Fairchild Semiconductor Corporation
Check for Price Yes Yes Transferred N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 8 30 V 1 14.5 A 6 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 2.5 W SWITCHING SILICON R-PDSO-G8 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL FAIRCHILD SEMICONDUCTOR CORP SO-8 8LD, JEDEC MS-012, .150"NARROW BODY compliant EAR99 SOIC 8 8541.29.00.95
FDS6676AS
Rochester Electronics LLC
Check for Price Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 8 30 V 1 14.5 A 6 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SWITCHING SILICON R-PDSO-G8 e3 COMMERCIAL 1 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL ROCHESTER ELECTRONICS LLC SO-8 unknown SOT 8