Parametric results for: fds8870 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

420.0 mJ 4

5 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 4

5 hits Apply

DS Breakdown Voltage-Min (1)

30 V 4

5 hits Apply

Drain Current-Max (ID) (1)

18 A 5

5 hits Apply

Drain-source On Resistance-Max (1)

4.2 mΩ 4

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

R-PDSO-G8 4

5 hits Apply

e3 4

5 hits Apply

Manufacturer (3)

Fairchild Semiconductor Corporation 3 onsemi 1 Rochester Electronics LLC 1

5 hits Apply

1 4

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

8 4

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

150.0 °C 4

5 hits Apply

PLASTIC/EPOXY 4

5 hits Apply

RECTANGULAR 4

5 hits Apply

SMALL OUTLINE 4

5 hits Apply

Active 2 Obsolete 2 Transferred 1

5 hits Apply

Yes 3

5 hits Apply

260 3

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

2.5 W 4

5 hits Apply

Surface Mount (1)

YES 5

5 hits Apply