Parametric results for: fk18sm under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

DRAIN 9

9 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 9

9 hits Apply

DS Breakdown Voltage-Min (3)

450 V 3 500 V 3 600 V 3

Min (V) - Max (V)

9 hits Apply

Drain Current-Max (ID) (1)

18 A 9

9 hits Apply

Drain-source On Resistance-Max (3)

410 mΩ 3 500 mΩ 3 540 mΩ 3

Min (Ω) - Max (Ω)

9 hits Apply

METAL-OXIDE SEMICONDUCTOR 9

9 hits Apply

R-PSFM-T3 9

9 hits Apply

e0 3

9 hits Apply

Manufacturer (3)

Mitsubishi Electric 3 Powerex Power Semiconductors 3 Renesas Electronics Corporation 3

9 hits Apply

Number of Elements (1)

1 9

9 hits Apply

Number of Terminals (1)

3 9

9 hits Apply

ENHANCEMENT MODE 9

9 hits Apply

150.0 °C 6

9 hits Apply

PLASTIC/EPOXY 9

9 hits Apply

RECTANGULAR 9

9 hits Apply

FLANGE MOUNT 9

9 hits Apply

Not Recommended 3 Obsolete 3 Transferred 3

9 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 9

9 hits Apply

250 W 2 275 W 1

Min (W) - Max (W)

9 hits Apply

250 W 4 275 W 2

Min (W) - Max (W)

9 hits Apply

Surface Mount (1)

NO 9

9 hits Apply