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FQB12N60TM
Fairchild Semiconductor Corporation
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Check for Price | No | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 600 V | 1 | 10.5 A | 700 mΩ | 790 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 180 W | 42 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e0 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN LEAD | GULL WING | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | TO-263 | D2PAK-3 | 3 | unknown | EAR99 | |||||||
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FQB12N60C
Fairchild Semiconductor Corporation
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Check for Price | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 600 V | 1 | 12 A | 650 mΩ | 870 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 48 A | SWITCHING | SILICON | R-PSSO-G2 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | SMALL OUTLINE, R-PSSO-G2 | 3 | unknown | EAR99 | |||||||||||||
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FQB12N60TM
Rochester Electronics LLC
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Check for Price | No | No | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 600 V | 1 | 10.5 A | 700 mΩ | 790 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e0 | COMMERCIAL | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN LEAD | GULL WING | SINGLE | ROCHESTER ELECTRONICS LLC | TO-263 | D2PAK-3 | 3 | unknown | ||||||
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FQB12N60CTM
Fairchild Semiconductor Corporation
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Check for Price | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 600 V | 1 | 12 A | 650 mΩ | 870 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 225 W | 48 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | Not Qualified | 1 | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | LEAD FREE, D2PAK-3 | 3 | not_compliant | EAR99 | ||||||||
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FQB12N60
Fairchild Semiconductor Corporation
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Check for Price | No | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 600 V | 1 | 10.5 A | 700 mΩ | AVALANCHE RATED | 790 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 180 W | 42 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e0 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN LEAD | GULL WING | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | D2PAK | SMALL OUTLINE, R-PSSO-G2 | 3 | unknown | EAR99 | ||||||
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FQB12N60CTM
Rochester Electronics LLC
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Check for Price | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 600 V | 1 | 12 A | 650 mΩ | 870 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 48 A | SWITCHING | SILICON | R-PSSO-G2 | e3 | COMMERCIAL | 1 | 260 | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | ROCHESTER ELECTRONICS LLC | LEAD FREE, D2PAK-3 | 3 | unknown | |||||||||
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FQB12N60TM_AM002
Fairchild Semiconductor Corporation
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Check for Price | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 600 V | 1 | 10.5 A | 700 mΩ | 790 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 42 A | SWITCHING | SILICON | TO-263AB | R-PSSO-G2 | e3 | Not Qualified | 1 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | D2PAK | D2PAK-3 | 3 | not_compliant | EAR99 |