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FQI30N06L
Fairchild Semiconductor Corporation
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Check for Price | No | No | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 32 A | 45 mΩ | 350 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 79 W | 128 A | SWITCHING | SILICON | TO-262AA | R-PSIP-T3 | e0 | Not Qualified | 175 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN LEAD | THROUGH-HOLE | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | TO-262AA | IN-LINE, R-PSIP-T3 | 3 | compliant | EAR99 | ||
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FQI30N06TU
Fairchild Semiconductor Corporation
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Check for Price | No | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 30 A | 40 mΩ | 280 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 79 W | 120 A | SWITCHING | SILICON | TO-262AA | R-PSIP-T3 | e0 | Not Qualified | 175 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN LEAD | THROUGH-HOLE | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | TO-262 | IN-LINE, R-PSIP-T3 | 3 | unknown | EAR99 | |||
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FQI30N06LTU
Fairchild Semiconductor Corporation
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Check for Price | No | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 32 A | 45 mΩ | 350 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 79 W | 128 A | SWITCHING | SILICON | TO-262AA | R-PSIP-T3 | e0 | Not Qualified | 175 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | Tin/Lead (Sn/Pb) | THROUGH-HOLE | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | TO-262 | IN-LINE, R-PSIP-T3 | 3 | compliant | EAR99 | |||
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FQI30N06
Fairchild Semiconductor Corporation
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Check for Price | No | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 30 A | 40 mΩ | 280 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 79 W | 120 A | SWITCHING | SILICON | TO-262AA | R-PSIP-T3 | e0 | Not Qualified | 175 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN LEAD | THROUGH-HOLE | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | TO-262 | IN-LINE, R-PSIP-T3 | 3 | unknown | EAR99 |