Parametric results for: fqp6n80 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

680.0 mJ 5

6 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 5

6 hits Apply

DS Breakdown Voltage-Min (1)

800 V 5

6 hits Apply

Drain Current-Max (ID) (2)

5.5 A 2 5.8 A 3

Min (A) - Max (A)

6 hits Apply

Drain-source On Resistance-Max (2)

1.95 Ω 3 2.5 Ω 2

Min (Ω) - Max (Ω)

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

6 hits Apply

TO-220AB 4

6 hits Apply

R-PSFM-T3 5

6 hits Apply

e3 4

6 hits Apply

Manufacturer (3)

Fairchild Semiconductor Corporation 3 onsemi 2 Rochester Electronics LLC 1

6 hits Apply

NOT APPLICABLE 1

6 hits Apply

Number of Elements (1)

1 5

6 hits Apply

Number of Terminals (1)

3 5

6 hits Apply

ENHANCEMENT MODE 5

6 hits Apply

150.0 °C 4

6 hits Apply

PLASTIC/EPOXY 5

6 hits Apply

RECTANGULAR 5

6 hits Apply

FLANGE MOUNT 5

6 hits Apply

Active 2 Obsolete 3 Transferred 1

6 hits Apply

Yes 4

6 hits Apply

NOT APPLICABLE 1

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

6 hits Apply

158 W 3

6 hits Apply

Surface Mount (1)

NO 5

6 hits Apply