Parametric results for: fqpf4n90 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

570.0 mJ 4

6 hits Apply

ISOLATED 4

6 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 4

6 hits Apply

DS Breakdown Voltage-Min (1)

900 V 4

6 hits Apply

Drain Current-Max (ID) (2)

2.5 A 2 4 A 3

Min (A) - Max (A)

6 hits Apply

Drain-source On Resistance-Max (2)

3.3 Ω 2 4.2 Ω 2

Min (Ω) - Max (Ω)

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

6 hits Apply

TO-220AB 2

6 hits Apply

R-PSFM-T3 4

6 hits Apply

e3 6

6 hits Apply

Manufacturer (3)

Fairchild Semiconductor Corporation 3 onsemi 2 Rochester Electronics LLC 1

6 hits Apply

NOT APPLICABLE 1

6 hits Apply

Number of Elements (1)

1 5

6 hits Apply

Number of Terminals (1)

3 4

6 hits Apply

ENHANCEMENT MODE 5

6 hits Apply

150.0 °C 4

6 hits Apply

PLASTIC/EPOXY 4

6 hits Apply

RECTANGULAR 4

6 hits Apply

FLANGE MOUNT 4

6 hits Apply

Active 2 End Of Life 1 Obsolete 1 Transferred 2

6 hits Apply

Yes 5

6 hits Apply

NOT APPLICABLE 1

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

6 hits Apply

47 W 4

6 hits Apply

Surface Mount (1)

NO 5

6 hits Apply