Parametric results for: fqu6n40c under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

FAST SWITCHING 1

4 hits Apply

270.0 mJ 3

4 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 3

4 hits Apply

DS Breakdown Voltage-Min (1)

400 V 3

4 hits Apply

Drain Current-Max (ID) (1)

4.5 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

1 Ω 3

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

R-PSIP-T3 3

4 hits Apply

e3 1

4 hits Apply

Manufacturer (2)

Fairchild Semiconductor Corporation 3 Rochester Electronics LLC 1

4 hits Apply

NOT SPECIFIED 1

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

3 3

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 3

4 hits Apply

PLASTIC/EPOXY 3

4 hits Apply

RECTANGULAR 3

4 hits Apply

IN-LINE 3

4 hits Apply

Active 1 Obsolete 3

4 hits Apply

Yes 1

4 hits Apply

NOT SPECIFIED 1

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

48 W 3

4 hits Apply

Surface Mount (1)

NO 4

4 hits Apply