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FT6122D
FUJITSU Limited
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Check for Price | Obsolete | N-CHANNEL | NO | 2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE | 12 | 120 V | 4 | 4 A | 500 mΩ | LOGIC LEVEL COMPATIBLE | 90 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 36 W | 8 A | SWITCHING | SILICON | R-PSIP-T12 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | SINGLE | FUJITSU SEMICONDUCTOR AMERICA INC | IN-LINE, R-PSIP-T12 | 12 | unknown | EAR99 | 8541.29.00.95 | ||
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FT6122
FUJITSU Semiconductor Limited
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Check for Price | Obsolete | N-CHANNEL | NO | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | 12 | 120 V | 4 | 4 A | 500 mΩ | LOGIC LEVEL COMPATIBLE | 90 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 36 W | 8 A | SWITCHING | SILICON | R-PSIP-T12 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | SINGLE | FUJITSU SEMICONDUCTOR AMERICA INC | IN-LINE, R-PSIP-T12 | unknown | EAR99 | 8541.29.00.95 | |||
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FT6122D
FUJITSU Semiconductor Limited
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Check for Price | Obsolete | N-CHANNEL | NO | 2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE | 12 | 120 V | 4 | 4 A | 500 mΩ | LOGIC LEVEL COMPATIBLE | 90 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 36 W | 8 A | SWITCHING | SILICON | R-PSIP-T12 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | SINGLE | FUJITSU SEMICONDUCTOR AMERICA INC | IN-LINE, R-PSIP-T12 | unknown | EAR99 | 8541.29.00.95 | |||
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FT6122
FUJITSU Limited
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Check for Price | Obsolete | N-CHANNEL | NO | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | 12 | 120 V | 4 | 4 A | 500 mΩ | LOGIC LEVEL COMPATIBLE | 90 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 36 W | 8 A | SWITCHING | SILICON | R-PSIP-T12 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | SINGLE | FUJITSU SEMICONDUCTOR AMERICA INC | IN-LINE, R-PSIP-T12 | 12 | unknown | EAR99 | 8541.29.00.95 |