Register or Sign In
Parametric » Memory » DRAMs

Parametric results for: gddr3 4 5 under DRAMs

Filter Your Search

1 - 10 of 74 results

|
74 hits
-
74 hits
74 hits
-
74 hits
74 hits
74 hits
74 hits
74 hits
-
74 hits
74 hits
-
74 hits
74 hits
-
74 hits
74 hits
74 hits
74 hits
74 hits
-
74 hits
-
74 hits
74 hits
74 hits
74 hits
74 hits
74 hits
74 hits
74 hits
74 hits
74 hits
74 hits
-
74 hits
-
74 hits
Memory IC Type: GDDR3 DRAM
Select parts from the table below to compare.
 Compare
Compare
K4J52324QE-BJ1AT
 Samsung Semiconductor 		Check for Price Yes Obsolete 536.8709 Mbit 32 16MX32 1.9 V 200 ps 1 GHz 8192 GDDR3 DRAM COMMON 4,8 16000000 16.7772 M 3-STATE 4,8 110 mA 1.52 mA CMOS OTHER R-PBGA-B136 Not Qualified e1 3 85 °C 260 136 PLASTIC/EPOXY FBGA BGA136,12X17,32 RECTANGULAR GRID ARRAY, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM SAMSUNG SEMICONDUCTOR INC unknown EAR99 8542.32.00.28
K4J55323QG-AC120
 Samsung Semiconductor 		Check for Price No Obsolete 268.4355 Mbit 32 8MX32 1.8 V 230 ps FOUR BANK PAGE BURST GDDR3 DRAM AUTO/SELF REFRESH 1 1 8000000 8.3886 M SYNCHRONOUS YES 1.9 V 1.7 V CMOS OTHER R-PBGA-B136 Not Qualified e0 85 °C 136 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN LEAD BALL 800 µm BOTTOM 1.2 mm 14 mm 11 mm SAMSUNG SEMICONDUCTOR INC compliant EAR99 8542.32.00.24 BGA TFBGA, 136
K4J52324QH-HJ1A0
 Samsung Semiconductor 		Check for Price Yes Obsolete 536.8709 Mbit 32 16MX32 1.9 V 200 ps 1 GHz 8192 MULTI BANK PAGE BURST GDDR3 DRAM AUTO/SELF REFRESH COMMON 4,8 1 1 16000000 16.7772 M SYNCHRONOUS 3-STATE YES 4,8 85 mA 960 µA 2 V 1.5 V CMOS OTHER R-PBGA-B136 Not Qualified e1 3 85 °C 260 136 PLASTIC/EPOXY TFBGA BGA136,12X17,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 14 mm 10 mm SAMSUNG SEMICONDUCTOR INC unknown EAR99 8542.32.00.28 BGA TFBGA, BGA136,12X17,32 136
K4J55323QF-VC200
 Samsung Semiconductor 		Check for Price Yes Obsolete 268.4355 Mbit 32 8MX32 2 V 350 ps 500 MHz 4096 FOUR BANK PAGE BURST GDDR3 DRAM AUTO/SELF REFRESH COMMON 4 1 1 8000000 8.3886 M SYNCHRONOUS 3-STATE YES 4 130 mA 950 µA 2.1 V 1.9 V CMOS OTHER S-PBGA-B144 Not Qualified e1 2 85 °C 144 PLASTIC/EPOXY LFBGA BGA144,12X12,32 SQUARE GRID ARRAY, LOW PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.4 mm 12 mm 12 mm SAMSUNG SEMICONDUCTOR INC compliant EAR99 8542.32.00.24 BGA LFBGA, BGA144,12X12,32 144
K4J52324QE-BJ1A0
 Samsung Semiconductor 		Check for Price Yes Obsolete 536.8709 Mbit 32 16MX32 1.9 V 200 ps 1 GHz 8192 MULTI BANK PAGE BURST GDDR3 DRAM AUTO/SELF REFRESH COMMON 4,8 1 1 16000000 16.7772 M SYNCHRONOUS 3-STATE YES 4,8 110 mA 1.52 mA 2 V 1.8 V CMOS COMMERCIAL EXTENDED R-PBGA-B136 Not Qualified e1 3 85 °C 260 136 PLASTIC/EPOXY TFBGA BGA136,12X17,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 14 mm 11 mm SAMSUNG SEMICONDUCTOR INC unknown EAR99 8542.32.00.28 BGA TFBGA, BGA136,12X17,32 136
K4J55323QI-BC14
 Samsung Semiconductor 		Check for Price Yes Obsolete 268.4355 Mbit 32 8MX32 1.8 V 260 ps 700 MHz 4096 GDDR3 DRAM COMMON 4,8 8000000 8.3886 M 3-STATE 4,8 85 mA 925 µA CMOS OTHER R-PBGA-B136 Not Qualified 3 85 °C 260 136 PLASTIC/EPOXY FBGA BGA136,12X17,32 RECTANGULAR GRID ARRAY, FINE PITCH YES BALL 800 µm BOTTOM SAMSUNG SEMICONDUCTOR INC unknown EAR99 8542.32.00.24
HYB18H256321AFL16
 Qimonda AG 		Check for Price Yes Obsolete 268.4355 Mbit 32 8MX32 1.8 V 280 ps 450 MHz 4096 GDDR3 DRAM COMMON 8000000 8.3886 M 3-STATE 4,8 195 mA 610 µA CMOS OTHER R-PBGA-B136 Not Qualified 85 °C 136 PLASTIC/EPOXY FBGA BGA136,12X17,32 RECTANGULAR GRID ARRAY, FINE PITCH YES BALL 800 µm BOTTOM QIMONDA AG unknown EAR99 8542.32.00.24 FBGA, BGA136,12X17,32
HYB18H512321AFL20
 Qimonda AG 		Check for Price Yes Obsolete 536.8709 Mbit 32 16MX32 1.8 V 350 ps 500 MHz 8192 GDDR3 DRAM COMMON 4,8 16000000 16.7772 M 3-STATE 4,8 167 mA 600 µA CMOS OTHER R-PBGA-B136 Not Qualified 85 °C 136 PLASTIC/EPOXY FBGA BGA136,12X17,32 RECTANGULAR GRID ARRAY, FINE PITCH YES BALL 800 µm BOTTOM QIMONDA AG unknown EAR99 8542.32.00.28 FBGA, BGA136,12X17,32
K4J55323QF-GC15
 Samsung Semiconductor 		Check for Price No Obsolete 268.4355 Mbit 32 8MX32 2 V 260 ps 667 MHz 4096 GDDR3 DRAM COMMON 4 8000000 8.3886 M 3-STATE 4 140 mA 1.055 mA CMOS OTHER S-PBGA-B144 Not Qualified 85 °C 144 PLASTIC/EPOXY FBGA BGA144,12X12,32 SQUARE GRID ARRAY, FINE PITCH YES BALL 800 µm BOTTOM SAMSUNG SEMICONDUCTOR INC unknown EAR99 8542.32.00.24 FBGA, BGA144,12X12,32
K4J55323QG-BC160
 Samsung Semiconductor 		Check for Price Yes Obsolete 268.4355 Mbit 32 8MX32 1.8 V 290 ps 600 MHz 4096 FOUR BANK PAGE BURST GDDR3 DRAM AUTO/SELF REFRESH COMMON 4,8 1 1 8000000 8.3886 M SYNCHRONOUS 3-STATE YES 4,8 80 mA 860 µA 1.9 V 1.7 V CMOS OTHER R-PBGA-B136 Not Qualified e1 2 85 °C 136 PLASTIC/EPOXY TFBGA BGA136,12X17,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 14 mm 11 mm SAMSUNG SEMICONDUCTOR INC compliant EAR99 8542.32.00.24 BGA TFBGA, BGA136,12X17,32 136
12345Next