Parametric results for: gs66516t-mr under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

SOURCE 1

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Configuration (1)

SINGLE 1

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DS Breakdown Voltage-Min (1)

650 V 1

1 hit Apply

Drain Current-Max (ID) (1)

60 A 1

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Drain-source On Resistance-Max (1)

32 mΩ 1

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HIGH ELECTRON MOBILITY 1

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5.9 pF 1

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R-PDSO-N4 1

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e4 1

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Manufacturer (1)

GaN Systems 1

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3 1

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Number of Elements (1)

1 1

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Number of Terminals (1)

4 1

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ENHANCEMENT MODE 1

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150.0 °C 1

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-55.0 °C 1

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PLASTIC/EPOXY 1

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RECTANGULAR 1

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SMALL OUTLINE 1

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Contact Manufacturer 1

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260 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

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Surface Mount (1)

YES 1

1 hit Apply