Parametric results for: gwm100 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

ISOLATED 6

9 hits Apply

Configuration (1)

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE 8

9 hits Apply

DS Breakdown Voltage-Min (2)

85 V 4 100 V 4

Min (V) - Max (V)

9 hits Apply

Drain Current-Max (ID) (2)

90 A 4 103 A 4

Min (A) - Max (A)

9 hits Apply

Drain-source On Resistance-Max (2)

6.2 mΩ 4 8.5 mΩ 4

Min (Ω) - Max (Ω)

9 hits Apply

METAL-OXIDE SEMICONDUCTOR 8

9 hits Apply

R-PDFP-F17 2 R-PDIP-T17 2 R-PDSO-F17 1 R-PDSO-G17 3

9 hits Apply

Manufacturer (2)

IXYS Corporation 6 Littelfuse Inc 3

9 hits Apply

Number of Elements (1)

6 8

9 hits Apply

Number of Terminals (1)

17 8

9 hits Apply

ENHANCEMENT MODE 8

9 hits Apply

175.0 °C 8

9 hits Apply

PLASTIC/EPOXY 8

9 hits Apply

RECTANGULAR 8

9 hits Apply

FLATPACK 2 IN-LINE 2 SMALL OUTLINE 4

9 hits Apply

Active 3 Obsolete 3 Transferred 3

9 hits Apply

Yes 3

9 hits Apply

NOT SPECIFIED 8

9 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 8

9 hits Apply

Surface Mount (2)

NO 2 YES 6

9 hits Apply