Parametric results for: hat-10 under Power Field-Effect Transistors

All Filters Additional Feature Attenuation-Nom Characteristic Impedance Construction Input Power-Max (CW) JESD-30 Code JESD-609 Code Manufacturer Mounting Feature Number of Elements Number of Terminals Operating Frequency-Max Operating Frequency-Min Operating Temperature-Max Operating Temperature-Min RF/Microwave Device Type Surface Mount VSWR-Max

AVALANCHE RATED 5 BNC-F; BNC-M 1 BNC-F; BNC-M, USABLE TO 4000 MHZ 4

111 hits Apply

Attenuation-Nom (1)

10.0 dB 5

111 hits Apply

Characteristic Impedance (2)

50 Ω 3 75 Ω 2

Min (Ω) - Max (Ω)

111 hits Apply

COAXIAL 5

111 hits Apply

Input Power-Max (CW) (3)

26.99 dBm 2 30.0 dBm 2 32.3 dBm 1

Min (dBm) - Max (dBm)

111 hits Apply

R-PDSO-F6 11 R-PDSO-G6 8 R-PDSO-G8 80 R-PSSO-G4 2

111 hits Apply

e0 2 e6 4

111 hits Apply

Manufacturer (4)

Hitachi Ltd 35 LEM Holdings SSA 1 Mini-Circuits 5 Renesas Electronics Corporation 70

111 hits Apply

PANEL MOUNT 1

111 hits Apply

1 48 2 26

Min - Max

111 hits Apply

4 2 6 19 8 80

111 hits Apply

Operating Frequency-Max (1)

2 GHz 5

111 hits Apply

0.0 MHz 5

111 hits Apply

100.0 °C 5 105.0 °C 1 150.0 °C 71

Min (°C) - Max (°C)

111 hits Apply

-45.0 °C 5 -40.0 °C 1

Min (°C) - Max (°C)

111 hits Apply

RF/Microwave Device Type (1)

FIXED ATTENUATOR 5

111 hits Apply

Surface Mount (2)

NO 1 YES 104

111 hits Apply

VSWR-Max (3)

1.1 2 1.25 1 1.3 2

Min - Max

111 hits Apply