Parametric results for: hat1026r-el under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

3 hits Apply

DS Breakdown Voltage-Min (1)

30 V 1

3 hits Apply

Drain Current-Max (ID) (1)

7 A 1

3 hits Apply

Drain-source On Resistance-Max (1)

65 mΩ 3

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 1

3 hits Apply

R-PDSO-G8 3

3 hits Apply

Manufacturer (2)

Hitachi Ltd 1 Renesas Electronics Corporation 2

3 hits Apply

1 1

3 hits Apply

Number of Elements (1)

1 1

3 hits Apply

Number of Terminals (1)

8 3

3 hits Apply

ENHANCEMENT MODE 1

3 hits Apply

150.0 °C 1

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

SMALL OUTLINE 3

3 hits Apply

Not Recommended 1 Obsolete 1 Transferred 1

3 hits Apply

Yes 1

3 hits Apply

260 1

3 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 1

3 hits Apply

2.5 W 1

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply