Parametric results for: hat1126r-el-e under Power Field-Effect Transistors

All Filters Configuration Drain Current-Max (ID) FET Technology Manufacturer Number of Elements Operating Temperature-Max Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE 1

1 hit Apply

Drain Current-Max (ID) (1)

6 A 1

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METAL-OXIDE SEMICONDUCTOR 1

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Manufacturer (1)

Renesas Electronics Corporation 1

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Number of Elements (1)

1 1

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150.0 °C 1

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Not Recommended 1

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Yes 1

1 hit Apply

NOT SPECIFIED 1

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Polarity/Channel Type (1)

P-CHANNEL 1

1 hit Apply

2 W 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply