Parametric results for: hat30 under Power Field-Effect Transistors

All Filters Additional Feature Attenuation-Nom Characteristic Impedance Construction Input Power-Max (CW) JESD-30 Code JESD-609 Code Manufacturer Mounting Feature Number of Elements Number of Terminals Operating Frequency-Max Operating Frequency-Min Operating Temperature-Max Operating Temperature-Min RF/Microwave Device Type Surface Mount VSWR-Max

AVALANCHE RATED 2 BNC-F; BNC-M 1 BNC-F; BNC-M, USABLE TO 4000 MHZ 2

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Attenuation-Nom (1)

30.0 dB 3

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Characteristic Impedance (1)

50 Ω 3

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COAXIAL 3

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Input Power-Max (CW) (1)

30.0 dBm 3

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R-PDSO-G8 26

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e0 1

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Manufacturer (3)

Hitachi Ltd 7 Mini-Circuits 3 Renesas Electronics Corporation 25

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PANEL MOUNT 1

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2 21

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8 26

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Operating Frequency-Max (1)

2 GHz 3

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0.0 MHz 3

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100.0 °C 3 150.0 °C 24

Min (°C) - Max (°C)

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-45.0 °C 3

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RF/Microwave Device Type (1)

FIXED ATTENUATOR 3

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Surface Mount (2)

NO 1 YES 28

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VSWR-Max (2)

1.15 2 1.4 1

Min - Max

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