Parametric results for: hgt1s12n60b3s9a under IGBTs

All Filters Additional Feature Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration Gate-Emitter Thr Voltage-Max Gate-Emitter Voltage-Max JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOW CONDUCTION LOSS 2 LOW CONDUCTION LOSS, ULTRA FAST SWITCHING 1

3 hits Apply

COLLECTOR 3

3 hits Apply

Collector Current-Max (IC) (1)

27 A 3

3 hits Apply

Collector-Emitter Voltage-Max (1)

600 V 3

3 hits Apply

Configuration (1)

SINGLE 3

3 hits Apply

Gate-Emitter Thr Voltage-Max (1)

6 V 1

3 hits Apply

20 V 1

3 hits Apply

TO-263AB 3

3 hits Apply

R-PSSO-G2 3

3 hits Apply

e0 1

3 hits Apply

Manufacturer (3)

Fairchild Semiconductor Corporation 1 Harris Semiconductor 1 Intersil Corporation 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

2 3

3 hits Apply

150.0 °C 1

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

SMALL OUTLINE 3

3 hits Apply

Obsolete 1 Transferred 2

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

104 W 1

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply