Parametric results for: hgt1s12n60c3 under IGBTs

All Filters Additional Feature Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration Fall Time-Max (tf) Gate-Emitter Thr Voltage-Max Gate-Emitter Voltage-Max JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

LOW CONDUCTION LOSS 15 LOW CONDUCTION LOSS, HYPER FAST RECOVERY 3 LOW CONDUCTION LOSS, ULTRA FAST 3 LOW CONDUCTION LOSS, ULTRA FAST SWITCHING 12 RC-IGBT 2

39 hits Apply

COLLECTOR 35

39 hits Apply

Collector Current-Max (IC) (1)

24 A 39

39 hits Apply

Collector-Emitter Voltage-Max (1)

600 V 39

39 hits Apply

Configuration (2)

SINGLE 16 SINGLE WITH BUILT-IN DIODE 19

39 hits Apply

275 ns 14 400 ns 9 275 s 2

Min (ns) - Max (ns)

39 hits Apply

Gate-Emitter Thr Voltage-Max (2)

6 V 16 7.5 V 9

Min (V) - Max (V)

39 hits Apply

20 V 25

39 hits Apply

TO-262AA 6 TO-263AB 26

39 hits Apply

R-PSIP-T3 7 R-PSSO-G2 26 R-PSSO-G3 2

39 hits Apply

e0 26

39 hits Apply

Manufacturer (5)

Fairchild Semiconductor Corporation 9 Harris Semiconductor 12 Intersil Corporation 12 onsemi 2 Rochester Electronics LLC 4

39 hits Apply

NOT SPECIFIED 4

39 hits Apply

Number of Elements (1)

1 35

39 hits Apply

Number of Terminals (2)

2 26 3 9

39 hits Apply

150.0 °C 25

39 hits Apply

-40.0 °C 2

39 hits Apply

PLASTIC/EPOXY 35

39 hits Apply

RECTANGULAR 35

39 hits Apply

IN-LINE 7 SMALL OUTLINE 28

39 hits Apply

Active 6 Obsolete 22 Transferred 11

39 hits Apply

No 6

39 hits Apply

NOT SPECIFIED 4

39 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 39

39 hits Apply

104 W 3

39 hits Apply

104 W 24

39 hits Apply

Surface Mount (2)

NO 11 YES 28

39 hits Apply