Parametric results for: huf75309p3 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

DRAIN 5

5 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 5

5 hits Apply

DS Breakdown Voltage-Min (1)

55 V 5

5 hits Apply

Drain Current-Max (ID) (2)

17 A 2 19 A 3

Min (A) - Max (A)

5 hits Apply

Drain-source On Resistance-Max (1)

70 mΩ 5

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

TO-220AB 5

5 hits Apply

R-PSFM-T3 5

5 hits Apply

e0 2 e3 3

5 hits Apply

Manufacturer (4)

Fairchild Semiconductor Corporation 2 Harris Semiconductor 1 Intersil Corporation 1 Rochester Electronics LLC 1

5 hits Apply

NOT APPLICABLE 1

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

3 5

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

175.0 °C 4

5 hits Apply

PLASTIC/EPOXY 5

5 hits Apply

RECTANGULAR 5

5 hits Apply

FLANGE MOUNT 5

5 hits Apply

Active 1 Obsolete 4

5 hits Apply

Yes 1

5 hits Apply

NOT APPLICABLE 1

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

45 W 2

5 hits Apply

45 W 2 55 W 2

Min (W) - Max (W)

5 hits Apply

Surface Mount (1)

NO 5

5 hits Apply