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Manufacturer: Intel Corporation
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EPCQ16ASI8N
 Intel Corporation 		$11.7886 Yes Active 16.7772 Mbit 1 16MX1 3.3 V 100 MHz FLASH 20 100000 Write/Erase Cycles 1 16000000 16.7772 M SYNCHRONOUS 3-STATE SERIAL 3.3 V 50 µA 15 µA 3.6 V 2.7 V CMOS INDUSTRIAL R-PDSO-G8 e3 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 8 PLASTIC/EPOXY SOP RECTANGULAR SMALL OUTLINE YES Tin (Sn) GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm INTEL CORP SOIC-8 compliant 3A991 8542.32.00.51 Intel
EPC2TC32N
 Intel Corporation 		$28.8800 Yes Obsolete 1.6957 Mbit 1 1695680X1 3.3 V CONFIGURATION MEMORY IT ALSO REQUIRES 5V NOMINAL SUPPLY 1 1695680 1.6957 M SYNCHRONOUS 3-STATE SERIAL 3.3 V 100 µA 50 µA 3.6 V 3 V CMOS COMMERCIAL S-PQFP-G32 Not Qualified e3 3 70 °C 260 30 32 PLASTIC/EPOXY TQFP TQFP32,.35SQ,32 SQUARE FLATPACK, THIN PROFILE YES MATTE TIN GULL WING 800 µm QUAD 1.2 mm 7 mm 7 mm INTEL CORP TQFP-32 compliant EAR99 8542.32.00.61 Intel
EPC2LC20N
 Intel Corporation 		$36.0766 Yes Obsolete 1.6957 Mbit 1 1695680X1 3.3 V CONFIGURATION MEMORY IT ALSO REQUIRES 5V NOMINAL SUPPLY 1 1695680 1.6957 M SYNCHRONOUS 3-STATE SERIAL 3.3 V 100 µA 50 µA 3.6 V 3 V CMOS COMMERCIAL S-PQCC-J20 Not Qualified e3 3 70 °C 245 30 20 PLASTIC/EPOXY QCCJ LCC20,.39SQ SQUARE CHIP CARRIER YES MATTE TIN J BEND 1.27 mm QUAD 4.572 mm 8.9662 mm 8.9662 mm INTEL CORP LCC-20 compliant EAR99 8542.32.00.61 Intel
TB28F008S5-100
 Intel Corporation 		Check for Price No Obsolete 8.3886 Mbit 8 64K 1MX8 5 V 100 ns FLASH USER-SELECTABLE 5V OR 12V VPP YES NO 1 16 1000000 1.0486 M ASYNCHRONOUS 3-STATE PARALLEL 5 V YES 20 µA 5.5 V 4.5 V MOS INDUSTRIAL NO NOR TYPE R-PDSO-G44 Not Qualified e0 85 °C -40 °C 44 PLASTIC/EPOXY SOP SOP44,.63 RECTANGULAR SMALL OUTLINE YES TIN LEAD GULL WING 1.27 mm DUAL 2.95 mm 28.2 mm 13.3 mm INTEL CORP SOP, SOP44,.63 unknown EAR99 8542.32.00.51 SOIC 44
IMC004FLSP
 Intel Corporation 		Check for Price Obsolete 33.5544 Mbit 16 64K 2MX16 3.3 V 250 ns FLASH CARD ALSO CAN BE OPERATED IN 4.75V TO 5.25V 8 NO 1 64 2000000 2.0972 M ASYNCHRONOUS 3-STATE 256/512 words PARALLEL 12 V YES 20 µA 160 µA 3.6 V 3 V MOS COMMERCIAL NO NOR TYPE SOFTWARE X-XXMA-X68 Not Qualified 70 °C 68 UNSPECIFIED CARD68 UNSPECIFIED MICROELECTRONIC ASSEMBLY NO UNSPECIFIED UNSPECIFIED INTEL CORP , CARD68 unknown EAR99 8542.32.00.51
TE28F320B3BC90
 Intel Corporation 		Check for Price No No Transferred 33.5544 Mbit 16 4K,32K 2MX16 3 V 90 ns FLASH BOTTOM BOOT BLOCK BOTTOM YES NO 1 8,63 2000000 2.0972 M ASYNCHRONOUS PARALLEL 2.7 V 5 µA 55 µA 3.6 V 2.7 V CMOS INDUSTRIAL NO NOR TYPE R-PDSO-G48 Not Qualified e0 85 °C -40 °C 48 PLASTIC/EPOXY TSSOP TSSOP48,.8,20 RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH YES TIN LEAD GULL WING 500 µm DUAL 1.2 mm 18.4 mm 12 mm INTEL CORP 12 X 20 MM, TSOP-48 compliant EAR99 8542.32.00.51 TSOP 48
EPC1VLI20
 Intel Corporation 		Check for Price No Active 1.0465 Mbit 1 1046496X1 3.3 V 75 ns CONFIGURATION MEMORY COMMON 1 1046496 1.0465 M SYNCHRONOUS SERIAL 3.6 V 3 V CMOS INDUSTRIAL S-PQCC-J20 Not Qualified e0 85 °C -40 °C 20 PLASTIC/EPOXY QCCJ LCC20,.39SQ SQUARE CHIP CARRIER YES TIN LEAD J BEND 1.27 mm QUAD 4.57 mm 8.9662 mm 8.9662 mm INTEL CORP QCCJ, LCC20,.39SQ compliant EAR99 8542.32.00.51
EPC1064VTI
 Intel Corporation 		Check for Price No Active 65.536 kbit 1 64KX1 3.3 V 100 ns 4 MHz CONFIGURATION MEMORY 1 64000 65.536 k SYNCHRONOUS 3-STATE SERIAL 4-WIRE 100 µA 10 µA 3.6 V 3 V CMOS INDUSTRIAL S-PQFP-G32 Not Qualified e0 85 °C -40 °C 32 PLASTIC/EPOXY LQFP QFP32,.35SQ,32 SQUARE FLATPACK, LOW PROFILE YES TIN LEAD GULL WING 800 µm QUAD 1.27 mm 7 mm 7 mm INTEL CORP LQFP, QFP32,.35SQ,32 compliant EAR99 8542.32.00.51
E28F320J3C-110
 Intel Corporation 		Check for Price Obsolete 33.5544 Mbit 16 2MX16 3 V 110 ns FLASH 8 1 2000000 2.0972 M ASYNCHRONOUS PARALLEL 3 V 3.6 V 2.7 V CMOS INDUSTRIAL NOR TYPE R-PDSO-G56 Not Qualified 85 °C -40 °C 56 PLASTIC/EPOXY TSOP1 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 500 µm DUAL 1.2 mm 18.4 mm 14 mm INTEL CORP 14 X 20 MM, TSOP-56 unknown EAR99 8542.32.00.51 TSOP 56
VS28F016SV
 Intel Corporation 		Check for Price No Obsolete 2.0972 Mbit 8 256KX8 5 V 150 ns FLASH 100000 ERASE/PROGRAM CYCLES YES NO 100000 Write/Erase Cycles 1 256000 262.144 k ASYNCHRONOUS 3-STATE PARALLEL 12 V 100 µA 30 µA 5.5 V 4.5 V CMOS COMMERCIAL NO NOR TYPE R-PDIP-T32 Not Qualified e0 70 °C 32 PLASTIC/EPOXY DIP DIP32,.6 RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL 4.83 mm 41.91 mm 15.24 mm INTEL CORP 0.620 X 1.640 INCH, PLASTIC, DIP-32 unknown EAR99 8542.32.00.51
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