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IPB017N10N5LFATMA1
Infineon Technologies AG
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$4.5890 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 6 | 100 V | 1 | 180 A | 1.7 mΩ | 979 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 313 W | 720 A | SILICON | TO-263 | R-PSSO-G6 | e3 | 1 | 150 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PSSO-G6 | compliant | EAR99 | Infineon | |||
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IPB017N10N5ATMA1
Infineon Technologies AG
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$5.5150 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 6 | 100 V | 1 | 180 A | 1.7 mΩ | 979 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 720 A | SWITCHING | SILICON | R-PSSO-G6 | e3 | 1 | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PSSO-G6 | not_compliant | EAR99 | Infineon | ||||||
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IPB017N10N5LF
Infineon Technologies AG
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Check for Price | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 6 | 100 V | 1 | 180 A | 1.7 mΩ | 979 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 313 W | 720 A | SILICON | TO-263 | R-PSSO-G6 | e3 | 1 | 150 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PSSO-G6 | compliant | EAR99 | Infineon | |||
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IPB017N10N5
Infineon Technologies AG
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Check for Price | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 6 | 100 V | 1 | 180 A | 1.7 mΩ | 979 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 720 A | SWITCHING | SILICON | TO-263 | R-PSSO-G6 | e3 | 1 | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PSSO-G6 | compliant | EAR99 | Infineon |