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IPB039N10N3GE8187ATMA1
Infineon Technologies AG
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$1.7497 | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 6 | 100 V | 1 | 160 A | 3.9 mΩ | 340 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 640 A | SWITCHING | SILICON | TO-263AA | R-PSSO-G6 | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | GREEN, PLASTIC, TO-263, 7 PIN | compliant | EAR99 | Infineon | ||||||||||||
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IPB039N10N3GATMA1
Infineon Technologies AG
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$2.0047 | No | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 6 | 100 V | 1 | 160 A | 3.9 mΩ | 340 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 640 A | SWITCHING | SILICON | TO-263AA | R-PSSO-G6 | e3 | Not Qualified | 1 | 175 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | GREEN, PLASTIC, TO-263, 7 PIN | not_compliant | EAR99 | Infineon | D2PAK | 4 | |||
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IPB039N10N3GXT
Infineon Technologies AG
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Check for Price | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 6 | 100 V | 1 | 160 A | 3.9 mΩ | 340 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 640 A | SWITCHING | SILICON | TO-263AA | R-PSSO-G6 | 175 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PSSO-G6 | compliant | EAR99 | |||||||||||
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IPB039N10N3G
Infineon Technologies AG
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Check for Price | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 6 | 100 V | 1 | 160 A | 3.9 mΩ | 340 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 214 W | 640 A | SWITCHING | SILICON | TO-263AA | R-PSSO-G6 | e3 | Not Qualified | 1 | 175 °C | 260 | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PSSO-G6 | not_compliant | EAR99 | Infineon | D2PAK | 4 |