Parametric results for: ipb180p04p4l-02 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE 1

4 hits Apply

84.0 mJ 2

4 hits Apply

DRAIN 2

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 2

4 hits Apply

DS Breakdown Voltage-Min (1)

40 V 2

4 hits Apply

Drain Current-Max (ID) (1)

180 A 2

4 hits Apply

Drain-source On Resistance-Max (1)

3.9 mΩ 2

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

4 hits Apply

TO-263 2

4 hits Apply

R-PSSO-G6 2

4 hits Apply

e3 2

4 hits Apply

Manufacturer (1)

Infineon Technologies AG 4

4 hits Apply

1 3

4 hits Apply

Number of Elements (1)

1 2

4 hits Apply

Number of Terminals (1)

6 2

4 hits Apply

ENHANCEMENT MODE 2

4 hits Apply

175.0 °C 1

4 hits Apply

-55.0 °C 1

4 hits Apply

PLASTIC/EPOXY 2

4 hits Apply

RECTANGULAR 2

4 hits Apply

SMALL OUTLINE 2

4 hits Apply

Active 3 End Of Life 1

4 hits Apply

Yes 1

4 hits Apply

225 1 NOT SPECIFIED 2

4 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 2

4 hits Apply

150 W 1

4 hits Apply

Surface Mount (1)

YES 2

4 hits Apply