Parametric results for: ipc218n04n3 under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

40 V 3

3 hits Apply

Drain-source On Resistance-Max (1)

50 mΩ 3

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

R-XXUC-N 3

3 hits Apply

Manufacturer (1)

Infineon Technologies AG 3

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

UNSPECIFIED 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

UNCASED CHIP 3

3 hits Apply

Active 2 Not Recommended 1

3 hits Apply

Yes 1

3 hits Apply

NOT SPECIFIED 3

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply