Parametric results for: ipg20n04s4-09 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

145.0 mJ 3

3 hits Apply

Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

40 V 3

3 hits Apply

Drain Current-Max (ID) (1)

20 A 3

3 hits Apply

Drain-source On Resistance-Max (1)

8.6 mΩ 3

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

R-PDSO-F8 3

3 hits Apply

e3 2

3 hits Apply

Manufacturer (2)

Infineon Technologies AG 2 Rochester Electronics LLC 1

3 hits Apply

1 2 NOT SPECIFIED 1

3 hits Apply

Number of Elements (1)

2 3

3 hits Apply

Number of Terminals (1)

8 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

SMALL OUTLINE 3

3 hits Apply

Active 1 Obsolete 2

3 hits Apply

No 2

3 hits Apply

NOT SPECIFIED 3

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply