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IPG20N10S4L22ATMA1
Infineon Technologies AG
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$1.1067 | Yes | Active | N-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 8 | 100 V | 2 | 20 A | 22 mΩ | 130 mJ | 84 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 60 W | 80 A | SILICON | R-PDSO-F8 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | INFINEON TECHNOLOGIES AG | , | not_compliant | EAR99 | Infineon | ||||
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IPG20N10S4L22AATMA1
Infineon Technologies AG
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$1.1662 | Yes | Yes | Active | N-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 8 | 100 V | 2 | 20 A | 22 mΩ | 130 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 80 A | SILICON | R-PDSO-F8 | e3 | AEC-Q101 | 1 | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PDSO-F6 | not_compliant | EAR99 | Infineon | ||||||
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IPG20N10S4L-22
Infineon Technologies AG
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Check for Price | Yes | Active | N-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 8 | 100 V | 2 | 20 A | 22 mΩ | 130 mJ | 84 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 60 W | 80 A | SILICON | R-PDSO-F8 | e3 | AEC-Q101 | 1 | 175 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | INFINEON TECHNOLOGIES AG | not_compliant | EAR99 | Infineon | |||||
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IPG20N10S4L-22A
Infineon Technologies AG
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Check for Price | Yes | Active | N-CHANNEL | YES | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 8 | 100 V | 2 | 20 A | 22 mΩ | 130 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 80 A | SILICON | R-PDSO-F8 | e3 | AEC-Q101 | 1 | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | FLAT | DUAL | INFINEON TECHNOLOGIES AG | TDSON-8-10, 8 PIN | not_compliant | EAR99 | Infineon |