Parametric results for: ipi80n06s2-07 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

530.0 mJ 3

3 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

55 V 3

3 hits Apply

Drain Current-Max (ID) (1)

80 A 3

3 hits Apply

Drain-source On Resistance-Max (1)

6.6 mΩ 3

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

215 pF 1

3 hits Apply

TO-262AA 3

3 hits Apply

R-PSIP-T3 3

3 hits Apply

e3 2

3 hits Apply

Manufacturer (1)

Infineon Technologies AG 3

3 hits Apply

1 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

3 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

175.0 °C 3

3 hits Apply

-55.0 °C 1

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

IN-LINE 3

3 hits Apply

Active 1 Obsolete 2

3 hits Apply

Yes 2

3 hits Apply

260 1 NOT SPECIFIED 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

250 W 2

3 hits Apply

Surface Mount (1)

NO 3

3 hits Apply